advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v ultra-low on-resistance r ds(on) 2.5m fast switching characteristic i d 200a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.8 /w rthj-a 40 /w data and specifications subject to change without notice ap99t03gs-hf halogen-free product 201306071 800 120 200 parameter rating drain-source voltage 30 gate-source voltage + 20 pulsed drain current 1 continuous drain current, v gs @ 10v 3 continuous drain current (chip) continuous drain current, v gs @ 10v 3 120 maximum thermal resistance, junction-ambient (pcb mount) 4 total power dissipation 156 -55 to 150 parameter 1 total power dissipation 4 3.12 storage temperature range operating junction temperature range -55 to 150 thermal data g d s a p99t03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 2.5 m ? v gs =4.5v, i d =30a - - 4 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =30a - 110 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 80 128 nc q gs gate-source charge v ds =24v - 11.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 55 - nc t d(on) turn-on delay time v ds =15v - 16 - ns t r rise time i d =30a - 60 - ns t d(off) turn-off delay time r g =3.3 -55- ns t f fall time v gs =10v - 20 - ns c iss input capacitance v gs =0v - 5000 8000 pf c oss output capacitance v ds =25v - 1060 - pf c rss reverse transfer capacitance f=1.0mhz - 850 - pf r g gate resistance f=1.0mhz - 1.1 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0v - 55 - ns q rr reverse recovery charge di/dt=100a/s - 80 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 120a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap99t03gs-hf 4.surface mounted on 1 in 2 copper pad of fr4 board
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap99t03gs-hf 0 80 160 240 320 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 40 80 120 160 200 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c = 150 o c 1.6 2 2.4 2.8 3.2 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =1ma
ap99t03gs-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =18v v ds =24v i d =30a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
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